This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTWA60N12G2-4AG Product s.
Order code SCTWA60N12G2-4AG
VDS 1200 V
RDS(on) max. 58 mΩ
ID 52 A
HiP247-4
2 34 1
Drain(1, TAB)
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency
Gate(4) Driver
source(3)
Power source(2)
ND1TPS2DS3G4
Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SCTWA60N120G2-4 |
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2 | SCTWA60N120G2AG |
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5 | SCTWA40N120G2AG |
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6 | SCTWA40N120G2V |
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7 | SCTWA40N120G2V-4 |
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8 | SCTWA40N12G24AG |
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9 | SCTWA70N120G2V |
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10 | SCTWA70N120G2V-4 |
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11 | SCTW100N120G2AG |
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12 | SCTW100N65G2AG |
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