SCTWA60N120G2-4 - STMicroelectronics

SCTWA60N120G2-4 Silicon carbide Power MOSFET

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTWA60N120G2-4 Product su.

Features

Order code VDS RDS(on) max. ID SCTWA60N120G2-4 1200 V 52 mΩ 60 A
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switc.