SCS215AM SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 15A 23nC TO-220FM (1) (2) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) Anode (1) (2) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Bas.
1) Shorter recovery time
650V 15A 23nC
TO-220FM
(1)
(2)
lInner circuit
2) Reduced temperature dependence 3) High-speed switching possible
(1) Cathode (2) Anode
(1)
(2)
lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15
* 55
* Surge no repetitive forward current IFSM
1 2 3
Tube 50 C SCS215AM
Reel size (mm) Tape width (mm)
Unit .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SCS215AE |
ROHM |
SiC Schottky Barrier Diode | |
2 | SCS215AG |
ROHM |
SiC Schottky Barrier Diode | |
3 | SCS215AJ |
ROHM |
SiC Schottky Barrier Diode | |
4 | SCS215AJHR |
ROHM |
Automotive Grade SiC Schottky Barrier Diode | |
5 | SCS210AG |
Rohm |
SiC Schottky Barrier Diode | |
6 | SCS210AJ |
ROHM |
SiC Schottky Barrier Diode | |
7 | SCS210KE2 |
ROHM |
SiC Schottky Barrier Diode | |
8 | SCS210KE2HR |
Rohm |
Automotive Grade SiC Schottky Barrier Diode | |
9 | SCS210KGHR |
Rohm |
SiC Schottky Barrier Diode | |
10 | SCS212AGHR |
Rohm |
SiC Schottky Barrier Diode | |
11 | SCS212AJ |
Rohm |
SiC Schottky Barrier Diode | |
12 | SCS212AJHR |
ROHM |
Automotive Grade SiC Schottky Barrier Diode |