SCS212AJ - Rohm

SCS212AJ SiC Schottky Barrier Diode

SCS212AJ SiC Schottky Barrier Diode VR 650V IF 12A QC 18nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline LPT(L) Data Sheet (1) (2) (3) (4) lInner circuit (1) (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4) lPackaging .

Features

1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline LPT(L) Data Sheet (1) (2) (3) (4) lInner circuit (1) (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4) lPackaging specifications Packaging Embossed tape Reel size (mm) 330 Tape width (mm) Type Basic ordering unit (pcs) 24 1,000 Taping code TLL Marking SCS212AJ lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 650 V Reverse voltage (DC) Continuous forw.