SCS212AGHR - Rohm

SCS212AGHR SiC Schottky Barrier Diode

SCS212AGHR SiC Schottky Barrier Diode VR 650V IF 12A QC 18nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer Schottky diode lAEC-Q101 Qualified TO-220AC (1) Data Sheet lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging spe.

Features

1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer Schottky diode lAEC-Q101 Qualified TO-220AC (1) Data Sheet lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 C SCS212AG lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward curren.