SCS215AG - ROHM

SCS215AG SiC Schottky Barrier Diode

SCS215AG SiC Schottky Barrier Diode lOutline Datasheet VR IF QC lFeatures 1) Shorter recovery time 650V 15A 23nC TO-220AC (1) (2) (3) lInner circuit (1) 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer type .

Features

1) Shorter recovery time 650V 15A 23nC TO-220AC (1) (2) (3) lInner circuit (1) 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer type Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15
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* Surge no repetitive forward current IFSM 1 2 3 Tube 50 C SCS215AG Reel size (mm) Tape width (m.