SCS215AE SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 15A 23nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) N/C (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Di.
1) Shorter recovery time
650V 15A 23nC
TO-247
(1) (2)
(3)
lInner circuit
2) Reduced temperature dependence 3) High-speed switching possible
(1) N/C (2) Cathode (3) Anode
(1) (2) (3)
lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15
* 55
* Surge no repetitive forward current IFSM
1 2 3
Tube 30 C SCS215AE
Reel size (mm) Tape width.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SCS215AG |
ROHM |
SiC Schottky Barrier Diode | |
2 | SCS215AJ |
ROHM |
SiC Schottky Barrier Diode | |
3 | SCS215AJHR |
ROHM |
Automotive Grade SiC Schottky Barrier Diode | |
4 | SCS215AM |
ROHM |
SiC Schottky Barrier Diode | |
5 | SCS210AG |
Rohm |
SiC Schottky Barrier Diode | |
6 | SCS210AJ |
ROHM |
SiC Schottky Barrier Diode | |
7 | SCS210KE2 |
ROHM |
SiC Schottky Barrier Diode | |
8 | SCS210KE2HR |
Rohm |
Automotive Grade SiC Schottky Barrier Diode | |
9 | SCS210KGHR |
Rohm |
SiC Schottky Barrier Diode | |
10 | SCS212AGHR |
Rohm |
SiC Schottky Barrier Diode | |
11 | SCS212AJ |
Rohm |
SiC Schottky Barrier Diode | |
12 | SCS212AJHR |
ROHM |
Automotive Grade SiC Schottky Barrier Diode |