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: SILICON NPN TRIPLE DIFFUSED (PCT PROCESS) VIDEO OUTPUT STAGE FOR BAN TV. HIGH VOLTAGE SWITCHING APPLICATONS- FEATURES • Hi §h Voltage : VCB0 =150V, VCE0 =150V • Low Saturation Voltage : VCE(sat )=0 . 5V(Max. S1840 Unit in MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base .
• Hi §h Voltage : VCB0 =150V, VCE0 =150V
• Low Saturation Voltage : VCE(sat )=0 . 5V(Max.
S1840
Unit in
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL vCBO vCEO VEBO
ic IB PC
r stg
RATING 150 150
30 10 625 150 -55-150
UNIT V
1. EMITTER
2. BASE
mA
3. COLLECTOR
mA
JEDEC mW
EIAJ
TO-92 SC-43
TOSHIBA
2-5F1P
Weight : 0.21g
J
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-off Current Emitter .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S18 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 2 | S18-05N-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 3 | S18-05N-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 4 | S18-05P-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 5 | S18-05P-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 6 | S18-L232B-2 |
Senba Sensing |
Mini SMD Digital Pyroelectric Infrared Sensors |
|
| 7 | S1805 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | S1806 |
Toshiba |
Silicon PNP Transistor |
|
| 9 | S1807 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | S1808 |
Toshiba |
Silicon PNP Transistor |
|
| 11 | S1812 |
API Delevan |
Shielded Surface Mount Inductors |
|
| 12 | S1836 |
Toshiba |
Silicon NPN Transistor |
|