S1808 - Toshiba

S1808 Silicon PNP Transistor

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER OUTPUT STAGE OF AUDIO AMPLIFIERS. AND DESIGNED FOR COMPLEMENTARY USE WITH S1807 FEATURES: • Low Sat «ation Voltage : VfEfsst )==-0.7V(Max. ) at J (>- 500mA . Complement aty to SI 807 MAXIMUM RATINGS (T a=25°C _ CHARACTERISTIC Co llector-Base Voltage Collector-Emitter Vol.

Features

• Low Sat «ation Voltage : VfEfsst )==-0.7V(Max. ) at J (>- 500mA . Complement aty to SI 807 MAXIMUM RATINGS (T a=25°C _ CHARACTERISTIC Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipatioxi Junction Temperature Storage Temperature Range ELECTR ICAL CHARACTER I ST ICS (Ta=25°C CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain (1) DC Current Gain (2) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Ou.