S1805 - Toshiba

S1805 Silicon NPN Transistor

: ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) S1805 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION. HIGH RELIABILITY. LOW FREQUENCY MEDIUM POWER AMPLIFIERS- DRIVER STAGE AMPLIFIERS. FEATURES . Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r .

Features

. Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r C =400mA . Complementary to S1806. Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Range Storage Temperature SYMBOL VCBO 'CEO vEBO IB [ stg RATING 40 30 500 250 625 150 -55-150 UNIT V mA mA mV °C 1. EMITTER 2. BASE 3. COLLECTOR JEDEC EIAJ TOSHI BA TO— 98 SC-43 2— 5P1P Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC DC C.