SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) S1836 FOR HIGH VOLTAGE AMPLIFIER APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS COLOR TV VIDEO OUTPUT APPLICATIONS FEATURES: . Complementary to S1837. . 300V Minimum V(br)cEO . Low Saturation Voltage : VcE(sat )=°- 5V(Max. . Small Collector Output Capacitance. 5.1 MAX. Unit in mm MAXIMUM RATING.
. Complementary to S1837. . 300V Minimum V(br)cEO . Low Saturation Voltage : VcE(sat )=°- 5V(Max. . Small Collector Output Capacitance. 5.1 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vCBO vCEO vEBO PC T-i r stg RATING 300 300 UNIT i. EMITTER 2. BASE a COLLECTOR 100 62; 150 -55-150 JEDEC mA EIAJ mV TOSIBA We i^ht TO-92 SC-43 2 — 5Fi ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S1837 |
Toshiba |
Silicon PNP Transistor | |
2 | S1838 |
Toshiba |
Silicon NPN Transistor | |
3 | S1839 |
Toshiba |
Silicon PNP Transistor | |
4 | S18 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
5 | S18-05N-1 |
HIGHLY |
PROXIMITY SWITCH | |
6 | S18-05N-2 |
HIGHLY |
PROXIMITY SWITCH | |
7 | S18-05P-1 |
HIGHLY |
PROXIMITY SWITCH | |
8 | S18-05P-2 |
HIGHLY |
PROXIMITY SWITCH | |
9 | S18-L232B-2 |
Senba Sensing |
Mini SMD Digital Pyroelectric Infrared Sensors | |
10 | S1805 |
Toshiba |
Silicon NPN Transistor | |
11 | S1806 |
Toshiba |
Silicon PNP Transistor | |
12 | S1807 |
Toshiba |
Silicon NPN Transistor |