S1806 - Toshiba

S1806 Silicon PNP Transistor

SILICON PHP EPITAXIAL TYPE (PCT PROCESS) . F S1806 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIER. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION. LOW FREQUENCY, MEDIUM POWER AMPLIFIERSDRIVER STAGE AMPLIFIERS. FEATIT?ES: . Excellent h FE vs. Collector Current Characteristics, hFE(2)=23Min. at VCE =-1V, I c =-400mA . Complem.

Features

h FE(2) VCE(sat) VCE =1V, I c =-50mA VCE =-1V, I c =-400mA I c =-100mA, T B =-5mA vBE(sat) I C =-100mA, I B =-5mA Base-Emitter Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage VBE Vce=-1V, I c =-50mA v (BR) CBO l"C=-0.1mA, I E =0 v (BR) CEO I C =-lmA, I B =0 Collector Cut-off Current Emitter Cut-off Current : CB0 r EB0 VCB— 35V, IE =0 VEB =-5V, I C =0 MIN. TYP 70 _ 23 - RAX. 240 _ UNIT - - -0.25 V - - -1.2 V -0.65 -0.72 -0.80 V -40 - _ V -30 - - V - - -100 nA - - -100 nA 957- )) S1806 Ic - V CE w 1000 si 500 300 < hpE "- .