S1838 - Toshiba

S1838 Silicon NPN Transistor

. SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONSVOLTAGE AMPLIFIER APPLICATIONS- FEAT [-RES': • Complementary to S1839. • Driver Stage Application of 20 to 25 Watts Amplifiers I nit in mm Storage I Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC CONDITION Emitter Cut-off Current Collector-Emitter Brra.

Features

V CE --2V 3 100 Q2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) SAFE OPERATING AREA 30 50 100 COLLECTOR CURRENT I c CmA) VcE(sat) ~ I C oX, OM o< 35 10 30 50 100 COLLECTOR CURRENT I c CmA) CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 1.5 1 35 10 COLLECTOR-EMITTER VOLTAGE 30 50 100 VCE Cv) 970- .