S1837 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) FOR HIGH VOLTAGE AMPLIFIER APPLICATIONSPLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONSCOLOR TV VIDEO OUTPUT APPLICATIONS- FEATURES: Complementary to S1836 . 300V Minimum V( BR )cEO. . Lov Saturation Voltage : VCE (sat )=-<>. 5V(Max. ) Small Collector Output Capacitance. Unit in mm MAXIMUM EATINGS (Ta=25.
Complementary to S1836 . 300V Minimum V( BR )cEO. . Lov Saturation Voltage : VCE (sat )=-<>. 5V(Max. ) Small Collector Output Capacitance. Unit in mm MAXIMUM EATINGS (Ta=25°C) Collector Cut-off Current Collector-Emitter Breakdovn Voltage Collector-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance -966- I C"- V CE (LOW VOLTAGE REGION) 180 COMMON EMITTER Ta^8 5"C 100 1 -10 -5 -3 -80 -8 -1 -Q8 -60 -a.6 -40 -04 -0.3 -as ?.o 1 I B =-0.imA -8 -4 -6 -8 -It) -l i -14 COLLEC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S1836 |
Toshiba |
Silicon NPN Transistor | |
2 | S1838 |
Toshiba |
Silicon NPN Transistor | |
3 | S1839 |
Toshiba |
Silicon PNP Transistor | |
4 | S18 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
5 | S18-05N-1 |
HIGHLY |
PROXIMITY SWITCH | |
6 | S18-05N-2 |
HIGHLY |
PROXIMITY SWITCH | |
7 | S18-05P-1 |
HIGHLY |
PROXIMITY SWITCH | |
8 | S18-05P-2 |
HIGHLY |
PROXIMITY SWITCH | |
9 | S18-L232B-2 |
Senba Sensing |
Mini SMD Digital Pyroelectric Infrared Sensors | |
10 | S1805 |
Toshiba |
Silicon NPN Transistor | |
11 | S1806 |
Toshiba |
Silicon PNP Transistor | |
12 | S1807 |
Toshiba |
Silicon NPN Transistor |