RN1114MFV to RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Redu.
V 5 RN1115MFV 6 RN1116MFV VEBO 7 V RN1117MFV 15 RN1118MFV 25 IC 100 mA RN1114MFV PC (Note 1) 150 mW to 111M8FV Tj 150 °C Tstg −55 to 150 °C Land Pattern Dimensions (for reference only) Unit: mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Ple.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN1114 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
2 | RN1110 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
3 | RN1110MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
4 | RN1111 |
California Micro Devices Corp |
BUSSED RESISTOR NETWORK | |
5 | RN1111 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
6 | RN1111MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
7 | RN1112 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
8 | RN1112F |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
9 | RN1112MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
10 | RN1113 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
11 | RN1113F |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
12 | RN1113MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |