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RN1114 to RN1118 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1114/15/16/17/18 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts.
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2114 to RN2118 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1114 RN1115 RN1116 RN1117 RN1118 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1994-08 2021-08-30 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1110 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 2 | RN1110MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 3 | RN1111 |
California Micro Devices Corp |
BUSSED RESISTOR NETWORK |
|
| 4 | RN1111 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 5 | RN1111MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 6 | RN1112 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 7 | RN1112F |
Toshiba |
Silicon NPN Epitaxial Type Transistor |
|
| 8 | RN1112MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 9 | RN1113 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 10 | RN1113F |
Toshiba |
Silicon NPN Epitaxial Type Transistor |
|
| 11 | RN1113MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 12 | RN1114MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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