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RN1114MFV |
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| Part Number | RN1114MFV |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN1114MFV to RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV Switching Applications Inv... |
| Features |
V
5
RN1115MFV
6
RN1116MFV
VEBO
7
V
RN1117MFV
15
RN1118MFV
25
IC
100
mA
RN1114MFV
PC (Note 1)
150
mW
to 111M8FV
Tj
150
°C
Tstg
−55 to 150
°C
Land Pattern Dimensions
(for reference only) Unit: mm
0.5
0.45
1.15
0.4 0.45
0.4 0.4
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Ple... |
| Document |
 RN1114MFV Data Sheet
PDF 780.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1114 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 2 | RN1110 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 3 | RN1110MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 4 | RN1111 |
California Micro Devices Corp |
BUSSED RESISTOR NETWORK |
|
| 5 | RN1111 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|