RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F Equivalent Circuit Maximu.
Test Condition
― VCB = 50V, IE = 0
― VEB = 5V, IC = 0
― VCE = 5V, IC = 1mA
― IC = 5mA, IB = 0.25mA
― VCE = 10V, IC = 5mA
― VCB = 10V, IE = 0, f = 1MHz
――
Min
― ― 120 ― ― ― 15.4 32.9
Typ.
― ― ― 0.1 250 3 22 47
Max
100 100 700 0.3 ―
6 28.6 61.1
Unit
nA nA ― V MHz pF
kΩ
1 2001-06-07
RN1112F,RN1113F
2 2001-06-07
RN1112F,RN1113F
3 2001-06-07
Type Name RN1112F
RN1113F
Marking
RN1112F,RN1113F
4 2001-06-07
RN1112F,RN1113F
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor dev.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN1113 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
2 | RN1113MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
3 | RN1110 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
4 | RN1110MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
5 | RN1111 |
California Micro Devices Corp |
BUSSED RESISTOR NETWORK | |
6 | RN1111 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
7 | RN1111MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
8 | RN1112 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
9 | RN1112F |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
10 | RN1112MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
11 | RN1114 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
12 | RN1114MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |