RN1112MFV, RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number o.
ht: 1.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN1113 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
2 | RN1113F |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
3 | RN1110 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
4 | RN1110MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
5 | RN1111 |
California Micro Devices Corp |
BUSSED RESISTOR NETWORK | |
6 | RN1111 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
7 | RN1111MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
8 | RN1112 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
9 | RN1112F |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
10 | RN1112MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
11 | RN1114 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
12 | RN1114MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |