RJK6026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse dr.
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6026DPP |
Renesas Technology |
Silicon N Channel MOSFET High Speed Power Switching | |
2 | RJK6026DPP-E0 |
Renesas |
MOS FET | |
3 | RJK6020DPK |
Renesas Technology |
Silicon N Channel MOSFET High Speed Power Switching | |
4 | RJK6022DJE |
Renesas Technology |
Silicon N Channel MOSFET High Speed Power Switching | |
5 | RJK6024DP3-A0 |
Renesas Technology |
High Speed Power Switching MOS FET | |
6 | RJK6024DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
7 | RJK6024DPE |
Renesas |
N-Channel Power MOSFET | |
8 | RJK6025DPD |
Renesas |
N-Channel Power MOSFET | |
9 | RJK6025DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
10 | RJK6025DPH-E0 |
Renesas |
MOS FET | |
11 | RJK6029DJA |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | RJK6002DJE |
Renesas |
MOS FET |