RJK6029DJA - Renesas Technology

RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching

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Features

 Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)
 Low drive current
 High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D G 1. Source 2. Drain 3. Gate 32 1 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, d.