RJK6020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1465-0200 Rev.2.00 Sep 21, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings www.DataSheet4U.com (Ta = 25°C) Symb.
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
www.DataSheet4U.com
(Ta = 25°C)
Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 600 ±30 32 96 32 96 8.5 3.9 200 0.625 150
–55 to +150 Unit V V A A A A A mJ W °C/W °C °C
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain pea.
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1 | RJK6022DJE |
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Silicon N Channel MOSFET High Speed Power Switching | |
2 | RJK6024DP3-A0 |
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High Speed Power Switching MOS FET | |
3 | RJK6024DPD |
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4 | RJK6024DPE |
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5 | RJK6025DPD |
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6 | RJK6025DPE |
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Silicon N Channel MOS FET High Speed Power Switching | |
7 | RJK6025DPH-E0 |
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8 | RJK6026DPE |
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9 | RJK6026DPP |
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10 | RJK6026DPP-E0 |
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11 | RJK6029DJA |
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