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RJK6026DPE |
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| Part Number | RJK6026DPE |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | RJK6026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDP... |
| Features |
• Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse... |
| Document |
 RJK6026DPE Data Sheet
PDF 94.79KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK6026DPP |
Renesas Technology |
Silicon N Channel MOSFET High Speed Power Switching |
|
| 2 | RJK6026DPP-E0 |
Renesas |
MOS FET |
|
| 3 | RJK6020DPK |
Renesas Technology |
Silicon N Channel MOSFET High Speed Power Switching |
|
| 4 | RJK6022DJE |
Renesas Technology |
Silicon N Channel MOSFET High Speed Power Switching |
|
| 5 | RJK6024DP3-A0 |
Renesas Technology |
High Speed Power Switching MOS FET |
|