RJK0226DNS - Renesas Technology

RJK0226DNS Silicon N Channel Power MOS FET

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Features

 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V)
 Pb-free
 Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s.