RJK0216DPA - Renesas Technology

RJK0216DPA Silicon N Channel Power MOS FET

Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0208EJ0110 Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting  Pb-free  Halogen-free Outline RENESAS Package code: PWSN000.

Features

 Low on-resistance
 Capable of 4.5 V gate drive
 High density mounting
 Pb-free
 Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D(2)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and Schottky Barrier Diode 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note.