Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0120 Rev.1.20 May 16, 2012 Application DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008.
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008JD-A (Package: HWSON3046-8)
5678
234 D1 D1 D1
9 S1/D2
5678
4321
1 G1
MOS1
8 G2
9 1, 8 Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
S2 S2 S2 56 7
4321 (Bottom View)
MOS2 and Schottky Barrier Diode
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch N.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK0223DNS |
Renesas Technology |
Silicon N Channel Power MOS FET | |
2 | RJK0226DNS |
Renesas Technology |
Silicon N Channel Power MOS FET | |
3 | RJK0204DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
4 | RJK0206DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
5 | RJK0208DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
6 | RJK0210DPA |
Renesas Technology |
N-Channel MOSFET | |
7 | RJK0211DPA |
Renesas Technology |
N-Channel MOSFET | |
8 | RJK0212DPA |
Renesas Technology |
N-Channel MOSFET | |
9 | RJK0213DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
10 | RJK0214DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
11 | RJK0215DPA |
Renesas Technology |
N-Channel MOSFET | |
12 | RJK0216DPA |
Renesas Technology |
Silicon N Channel Power MOS FET |