Preliminary Datasheet RJK0214DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0206EJ0110 Rev.1.10 Sep 02, 2011 Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN000.
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D(2))
5 678
1 G1
234 D1 D1 D1
8 G2
4 32 1
MOS1
9 S1/D2
5678
9
S2 S2 S2 56 7
4321 (Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAR Note.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK0210DPA |
Renesas Technology |
N-Channel MOSFET | |
2 | RJK0211DPA |
Renesas Technology |
N-Channel MOSFET | |
3 | RJK0212DPA |
Renesas Technology |
N-Channel MOSFET | |
4 | RJK0213DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
5 | RJK0215DPA |
Renesas Technology |
N-Channel MOSFET | |
6 | RJK0216DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
7 | RJK0204DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
8 | RJK0206DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
9 | RJK0208DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
10 | RJK0222DNS |
Renesas Technology |
Silicon N Channel Power MOS FET | |
11 | RJK0223DNS |
Renesas Technology |
Silicon N Channel Power MOS FET | |
12 | RJK0226DNS |
Renesas Technology |
Silicon N Channel Power MOS FET |