R6076MNZ1 Nch 600V 76A Power MOSFET Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline RDS(on)(Max.) 0.055Ω ID ±76A TO-247 PD 740W lFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free.
1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications Packing
Tube
Reel size (mm)
-
lApplication Switching Power Supply
Tape width (mm) Type
Basic ordering unit (pcs)
450
Taping code
C9
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6076MNZ1 Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID
*1 ±76 A
Pulsed.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R6076ENZ1 |
ROHM |
Nch 600V 76A Power MOSFET | |
2 | R6076ENZ1 |
INCHANGE |
N-Channel MOSFET | |
3 | R6076KNZ4 |
ROHM |
Power MOSFET | |
4 | R600 |
Powerex Power Semiconductors |
General Purpose Rectifier | |
5 | R6000 |
LGE |
High Voltage Rectifiers | |
6 | R6000F |
Micro Commercial Components |
0.2mA Fast Recovery High Voltage Rectifier | |
7 | R6000GP |
MCC |
High Voltage Silicon Rectifier | |
8 | R6002END3 |
INCHANGE |
N-Channel MOSFET | |
9 | R6002END3 |
ROHM |
Power MOSFET | |
10 | R6002ENH |
ROHM |
Power MOSFET | |
11 | R6003KND3 |
ROHM |
Power MOSFET | |
12 | R6003KND3 |
INCHANGE |
N-Channel MOSFET |