R6076KNZ4 Nch 600V 76A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 42mΩ ±76A 735W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-247 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Tube Packing code C13 Marking R6076KNZ.
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
TO-247
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications Packing
Tube
Packing code
C13
Marking
R6076KNZ4
Quantity (pcs)
600
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID
*1 IDP
*2
600 ±76 ±228
V A A
Gate - Source voltage
static AC(f>1Hz)
VGSS
±20 V ±30 V
Avalanche current, single pulse
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R6076ENZ1 |
ROHM |
Nch 600V 76A Power MOSFET | |
2 | R6076ENZ1 |
INCHANGE |
N-Channel MOSFET | |
3 | R6076MNZ1 |
ROHM |
MOSFET | |
4 | R600 |
Powerex Power Semiconductors |
General Purpose Rectifier | |
5 | R6000 |
LGE |
High Voltage Rectifiers | |
6 | R6000F |
Micro Commercial Components |
0.2mA Fast Recovery High Voltage Rectifier | |
7 | R6000GP |
MCC |
High Voltage Silicon Rectifier | |
8 | R6002END3 |
INCHANGE |
N-Channel MOSFET | |
9 | R6002END3 |
ROHM |
Power MOSFET | |
10 | R6002ENH |
ROHM |
Power MOSFET | |
11 | R6003KND3 |
ROHM |
Power MOSFET | |
12 | R6003KND3 |
INCHANGE |
N-Channel MOSFET |