NotNeRewcDoemsimgennsded for R6076ENZ1 Nch 600V 76A Power MOSFET Data Sheet VDSS RDS(on) (Max.) ID PD 600V 0.042W 76A 120W lOutline TO-247 (1) (2) (3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. (1) Gate (2) Drain (3) Source *1 BODY D.
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
4) Drive circuits can be simple.
(1) Gate (2) Drain (3) Source
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packaging
Tube
Reel size (mm)
-
lApplication Switching Power Supply
Tape width (mm) Type
Basic ordering unit (pcs) Taping code
450 C9
Marking
R6076ENZ1
lAbsolute maximum ratings (Ta = 25°C) Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current Gate - S.
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R6076KNZ4 |
ROHM |
Power MOSFET | |
2 | R6076MNZ1 |
ROHM |
MOSFET | |
3 | R600 |
Powerex Power Semiconductors |
General Purpose Rectifier | |
4 | R6000 |
LGE |
High Voltage Rectifiers | |
5 | R6000F |
Micro Commercial Components |
0.2mA Fast Recovery High Voltage Rectifier | |
6 | R6000GP |
MCC |
High Voltage Silicon Rectifier | |
7 | R6002END3 |
INCHANGE |
N-Channel MOSFET | |
8 | R6002END3 |
ROHM |
Power MOSFET | |
9 | R6002ENH |
ROHM |
Power MOSFET | |
10 | R6003KND3 |
ROHM |
Power MOSFET | |
11 | R6003KND3 |
INCHANGE |
N-Channel MOSFET | |
12 | R6004CND |
ROHM |
N-Channel MOSFET |