R6002ENH - ROHM

R6002ENH Power MOSFET

R6002ENH 　　Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 2W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline SOP8 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TB1 Marking R60.

Features

1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline SOP8 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TB1 Marking R6002ENH Basic ordering unit (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID
*1 IDP
*2 600 V ±1.7 A ±4 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pu.