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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 1.7 A IDM Drain Current-Single Pluse 4 A PD Total Dissipation @TC=25℃ 26 W TJ Max. Operati.
·Drain Current
–ID=1.7A@ TC=25℃
·Drain Source Voltage-
: VDSS=600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 3.4Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
1.7
A
IDM
Drain Current-Single Pluse
4
A
PD
Total Dissipation @TC=25℃
26
W
TJ
Max.
R6002END3 - ROHM
R6002END3 Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 26W lFeatures 1) Low on-resistance 2) F.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | R6002ENH |
ROHM |
Power MOSFET |
|
| 2 | R600 |
Powerex Power Semiconductors |
General Purpose Rectifier |
|
| 3 | R6000 |
LGE |
High Voltage Rectifiers |
|
| 4 | R6000F |
Micro Commercial Components |
0.2mA Fast Recovery High Voltage Rectifier |
|
| 5 | R6000GP |
MCC |
High Voltage Silicon Rectifier |
|
| 6 | R6003KND3 |
ROHM |
Power MOSFET |
|
| 7 | R6003KND3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | R6004CND |
ROHM |
N-Channel MOSFET |
|
| 9 | R6004END |
Rohm |
Power MOSFET |
|
| 10 | R6004ENJ |
INCHANGE |
N-Channel MOSFET |
|
| 11 | R6004ENJ |
ROHM |
Power MOSFET |
|
| 12 | R6004ENX |
Rohm |
Power MOSFET |
|