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SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M (NPN) 4 5 3 2 1 VPW05980 Type SMBTA 56M Marking Ordering Code Pin Configuration s2G Q62702-A3474 Package 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage.
Collector-emitter breakdown voltage typ. max. 100 20 100 Unit V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I CEO hFE 80 80 4 - V I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 80 V, I E = 0 Collector cutoff current V nA µA nA - VCB = 80 V, I E = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, I B = 0 DC current gain 1) I C = 10 mA, VCE = 1 V I C = 100 mA, V CE = 1 V Collector-emitter saturation voltage1) 100 100 - - 0.25 1.2 V V VCEsat VBE(ON) I C = 100 mA, IB = 10 mA Bas.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Q62702-A3470 |
Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
|
| 2 | Q62702-A3471 |
Siemens Semiconductor Group |
Silicon Switching Diode (Switching applications High breakdown voltage) |
|
| 3 | Q62702-A3473 |
Siemens Semiconductor Group |
NPN Silicon AF Transistor |
|
| 4 | Q62702-A3461 |
Siemens Semiconductor Group |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
|
| 5 | Q62702-A3466 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) |
|
| 6 | Q62702-A3468 |
Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
|
| 7 | Q62702-A3469 |
Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
|
| 8 | Q62702-A376 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
|
| 9 | Q62702-A388 |
Siemens Semiconductor Group |
Silicon Switching Diode (For high-speed switching) |
|
| 10 | Q62702-A0042 |
Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode |
|
| 11 | Q62702-A0043 |
Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) |
|
| 12 | Q62702-A0062 |
Siemens Semiconductor Group |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
|