Q62702-A3470 - Siemens Semiconductor Group

Q62702-A3470 Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)

BAT 64-07W Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 64-07W Marking Ordering Code 67s Q62702-A3470 Pin Configuration Package.

Features

ess otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 2 200 mV 320 385 440 570 350 430 520 750 µA Unit IR IR VF - VR = 30 V Reverse current VR = 30 V, TA = 85 °C Forward voltage I F = 1 mA I F = 10 mA I F = 30 mA I F = 100 mA AC characteristics Diode capacitance CT - 4 6 pF VR = 1 V, f = 1 MHz Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter BAT 64... EHB00057 TA = Parameter BAT 64... EHB00058 ΙF 10 mA 2 ΙR 1 10 2 µA 10 1 TA = 125 C 10 85 C 10 0 TA = -40 25 85 125 C C C C 10 0 10 -1 25 C 10 -1 10 -.