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Silicon Crossover Ring Quad Schottky Diode q BAT 14-099R Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Q62702-A0042 Pin Configuration Package1) SOT-143 BAT 14-099R S8 Maximum Ratings per Diode Paramete.
R = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VF
–
–
∆VF
Values typ. 0.4 0.48
– 0.38 5.5 max.
Unit V
–
– 20
–
– mV pF Ω
–
–
–
CT RF
Forward current IF = f (VF)
Forward current IF = f (TS; TA
*)
*Package mounted on alumina
1) ∆VF
is the difference between the lowest and the highest VF in the component.
Semiconductor Group
2
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Q62702-A0043 |
Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) |
|
| 2 | Q62702-A0062 |
Siemens Semiconductor Group |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
|
| 3 | Q62702-A0960 |
Siemens Semiconductor Group |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
|
| 4 | Q62702-A1004 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
|
| 5 | Q62702-A1006 |
Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
|
| 6 | Q62702-A1010 |
Siemens Semiconductor Group |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
|
| 7 | Q62702-A1017 |
Siemens Semiconductor Group |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
|
| 8 | Q62702-A1025 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 9 | Q62702-A1028 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
|
| 10 | Q62702-A1028 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
|
| 11 | Q62702-A1030 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common cathode) |
|
| 12 | Q62702-A1031 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
|