Q62702-A3461 - Siemens Semiconductor Group

Q62702-A3461 Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)

Silicon Dual Schottky Diode DBS mixer application to 12 GHz q Low noise figure q Medium barrier type q BAT 14-099 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-099 Marking Ordering Code (tape and reel) S9 Q62702-A3461 Pin Configuration Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward .

Features

apacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VBR VF
  –
  – ∆VF Values typ.
  – max.
  – 4 Unit V 0.43 0.55
  –
  – 5.5
  –
  – 10 0.35
  – mV pF Ω
  –
  –
  – CT RF Semiconductor Group 2 BAT 14-099 Forward current IF = f (VF) Forward current IF = f (TS; TA
*)
*Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 14-099 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = Ω) f GHz 1 2 3 4 5 6 7 8 9 10 11 12 I = 0.02 mA MAG ANG 0.99 0.96 0.95 0.93 0.93 0.91 0.89 0.88 0.86 0.8.