Q62702-A1069 - Siemens Semiconductor Group

Q62702-A1069 Silicon Schottky Diode

Silicon Schottky Diode q q q q BAS 70W General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detection and mixing Type Ordering Code (tape and reel) Q62702-A1068 Q62702-A1069 Q62702-A1070 Pin Configuration 1 2 3 A1 A1 C1 C2 A2 C2 Marking Package1) BAS 70-04W BAS 70-05W BAS 70-06W C1/A2 74s C1/C2 75s A1/A2 76s.

Features

A Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 50 V VR = 70 V Diode capacitance Value typ. max. Unit V(BR) 70
  – 375 705 880
  –
  – 1.5
  – 34 2
  – V mV 300 600 750 410 750 1000 µA
  –
  – 0.1 10 pF
  – 2 ps
  – 100 Ω
  –
  –
  – nH
  – VF IR CT τ VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 kHz Series inductance rf LS Semiconductor Group 2 BAS 70W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) Differential forward resistance RF = f (IF) Semiconductor Group 3 BAS 70W Permissi.