Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Silicon Schottky Diode BAT 63 q Low barrier diode for mixer and detectors up to GHz frequencies Type Ordering Code (tape and reel) Q62702-A1004 1 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package BAT 63 63 SOT-143 Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Thermal Resistance Junctio.
f (VF) Forward current IF = f (TS; TA) Permissible Pulse load RthJS = f (tp) TA = 25 °C Permissible Pulse load IFmax / IFDC = f (tp) Semiconductor Group 3 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Q62702-A1006 |
Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
|
| 2 | Q62702-A1010 |
Siemens Semiconductor Group |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
|
| 3 | Q62702-A1017 |
Siemens Semiconductor Group |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
|
| 4 | Q62702-A1025 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 5 | Q62702-A1028 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
|
| 6 | Q62702-A1028 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
|
| 7 | Q62702-A1030 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common cathode) |
|
| 8 | Q62702-A1031 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
|
| 9 | Q62702-A1036 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 10 | Q62702-A1037 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 11 | Q62702-A1038 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 12 | Q62702-A1039 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|