Q62702-A1066 - Siemens Semiconductor Group

Q62702-A1066 Silicon Schottky Diode

Silicon Schottky Diode q q q q BAS 40W General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code (tape and reel) Q62702-A1065 Q62702-A1066 Q62702-A1067 Pin Configuration 1 2 3 A1 A1 C1 C1 A2 C2 Marking Package1) BAS 40-04W BAS 40-05W BAS 40-06W C1/A2 44s C1/C2 45s A1/A2 46s.

Features

otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 30 V VR = 40 V Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance Value typ. max. Unit V(BR) 40
  – 310 450 720
  –
  – 3 10 10 2
  – V mV 250 350 600 380 500 1000 µA
  –
  – 1 10 pF
  – 5
  –
  –
  – nH ps Ω
  –
  –
  – VF IR CT τ RF LS IF = 10 mA, f = 10 kHz Series inductance Semiconductor Group 2 BAS 40W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) .