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Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099R Marking 14s Ordering Code (taped) Q62702-A1006 Pin Configuration Package1) SOT-143 1) Dimensions see chapter Packag.
• High barrier diode for double balanced mixers, phase detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099R Marking 14s Ordering Code (taped) Q62702-A1006 Pin Configuration Package1) SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings (per diode) Parameter Forward current Operation temperature Storage temperature Power dissipation, TS ≤ 70 °C Symbol Limit Values 90 − 55 to + 150 − 55 to + 150 100 Unit mA °C °C mW
IF Top Tstg Ptot
Semiconductor Group
1
02.96
BAT 114-099R
Thermal Resistance (per diode) Pa.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Q62702-A1004 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
|
| 2 | Q62702-A1010 |
Siemens Semiconductor Group |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
|
| 3 | Q62702-A1017 |
Siemens Semiconductor Group |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
|
| 4 | Q62702-A1025 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 5 | Q62702-A1028 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
|
| 6 | Q62702-A1028 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
|
| 7 | Q62702-A1030 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common cathode) |
|
| 8 | Q62702-A1031 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
|
| 9 | Q62702-A1036 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 10 | Q62702-A1037 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 11 | Q62702-A1038 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 12 | Q62702-A1039 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|