Q62702-A1030 - Siemens Semiconductor Group

Q62702-A1030 Silicon Switching Diode Array (For high speed switching applications Common cathode)

BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type BAV 70W Marking Ordering Code A4s Q62702-A1030 Pin Configuration 1 = A1 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total Power dissipation.

Features

150 mA Reverse current IR VR = 70 V, TA = 25 °C VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C AC characteristics per Diode Diode capacitance CD 1.5 pF ns 6 VR = 0 V, f = 1 MHz Reverse recovery time trr IF = 10 mA, IR = 10 mA, RL = 100 Ω trr measured at 1 mA Semiconductor Group 2 Nov-28-1996 BAV 70W Forward current IF = f (TA
*;TS)
* Package mounted on epoxy Forward current IF = f (VF) TA = 25°C 300 mA IF 200 TA 150 TS 100 50 0 0 20 40 60 80 100 120 s tp 160 Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) 10 3 10 2 K/W RthJS 10 2 IFmax/.