BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/.
cified.
Parameter
Symbol min.
Value typ. max.
Unit
DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Forward current IF = f (TA
*TS)
BAR63
V(BR)
50 0.95 0.3 0.21 1.2 1 75 1.4 -
V nA 50 V 1.2 pF pF 0.3 Ω 2 ns nH
IR VF CT CT rf
τs
Ls
Forward current IF = f (TA
*TS)
per each Diode BAR63-04,-05,-06
mA
mA
TS IF TA
TS IF .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Q62702-A1030 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common cathode) | |
2 | Q62702-A1031 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common anode) | |
3 | Q62702-A1037 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) | |
4 | Q62702-A1038 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) | |
5 | Q62702-A1039 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) | |
6 | Q62702-A1004 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) | |
7 | Q62702-A1006 |
Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) | |
8 | Q62702-A1010 |
Siemens Semiconductor Group |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) | |
9 | Q62702-A1017 |
Siemens Semiconductor Group |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) | |
10 | Q62702-A1025 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) | |
11 | Q62702-A1028 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) | |
12 | Q62702-A1028 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |