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Q62702-A1036 |
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| Part Number | Q62702-A1036 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06... |
| Features |
cified.
Parameter
Symbol min.
Value typ. max.
Unit
DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Forward current IF = f (TA*TS)
BAR63
V(BR)
50 0.95 0.3 0.21 1.2 1 75 1.4 -
V nA 50 V 1.2 pF pF 0.3 Ω 2 ns nH
IR VF CT CT rf
τs
Ls
Forward current IF = f (TA*TS)
per each Diode BAR63-04,-05,-06
mA
mA
TS IF TA
TS IF ... |
| Document |
 Q62702-A1036 Data Sheet
PDF 80.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-A1030 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common cathode) |
|
| 2 | Q62702-A1031 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
|
| 3 | Q62702-A1037 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 4 | Q62702-A1038 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 5 | Q62702-A1039 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|