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Q62702-A1030 |
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| Part Number | Q62702-A1030 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type BAV 70W Marking Ordering Code A4s Q62702-A1030 Pin Configuration 1 = A1 2 = A2 Package 3 = C1/C2... |
| Features |
150 mA
Reverse current
IR
VR = 70 V, TA = 25 °C VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C
AC characteristics per Diode Diode capacitance
CD
1.5
pF ns 6
VR = 0 V, f = 1 MHz
Reverse recovery time
trr
IF = 10 mA, IR = 10 mA, RL = 100 Ω trr measured at 1 mA
Semiconductor Group
2
Nov-28-1996
BAV 70W
Forward current IF = f (TA*;TS) * Package mounted on epoxy
Forward current IF = f (VF) TA = 25°C
300
mA
IF
200
TA
150
TS
100
50
0 0 20 40 60 80 100 120 s tp 160
Permissible Pulse Load RthJS = f(tp)
Permissible Pulse Load IFmax/IFDC = f(tp)
10 3
10 2
K/W
RthJS
10 2
IFmax/... |
| Document |
 Q62702-A1030 Data Sheet
PDF 70.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-A1031 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
|
| 2 | Q62702-A1036 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 3 | Q62702-A1037 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 4 | Q62702-A1038 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 5 | Q62702-A1039 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|