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Q62702-A1006 |
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| Part Number | Q62702-A1006 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, obser... |
| Features |
• High barrier diode for double balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099R Marking 14s Ordering Code (taped) Q62702-A1006 Pin Configuration Package1) SOT-143 1) Dimensions see chapter Package Outlines Maximum Ratings (per diode) Parameter Forward current Operation temperature Storage temperature Power dissipation, TS ≤ 70 °C Symbol Limit Values 90 − 55 to + 150 − 55 to + 150 100 Unit mA °C °C mW IF Top Tstg Ptot Semiconductor Group 1 02.96 BAT 114-099R Thermal Resistance (per diode) Pa... |
| Document |
 Q62702-A1006 Data Sheet
PDF 46.93KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-A1004 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
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| 2 | Q62702-A1010 |
Siemens Semiconductor Group |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
|
| 3 | Q62702-A1017 |
Siemens Semiconductor Group |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
|
| 4 | Q62702-A1025 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
|
| 5 | Q62702-A1028 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
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