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Q62702-A0042 |
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| Part Number | Q62702-A0042 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Silicon Crossover Ring Quad Schottky Diode q BAT 14-099R Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handl... |
| Features |
R = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VF – – ∆VF Values typ. 0.4 0.48 – 0.38 5.5 max. Unit V – – 20 – – mV pF Ω – – – CT RF Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina 1) ∆VF is the difference between the lowest and the highest VF in the component. Semiconductor Group 2 ... |
| Document |
 Q62702-A0042 Data Sheet
PDF 46.76KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-A0043 |
Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) |
|
| 2 | Q62702-A0062 |
Siemens Semiconductor Group |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
|
| 3 | Q62702-A0960 |
Siemens Semiconductor Group |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
|
| 4 | Q62702-A1004 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
|
| 5 | Q62702-A1006 |
Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
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