PXFC191507FC - Infineon

PXFC191507FC Thermally-Enhanced High Power RF LDMOS FET

The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal perform.

Features

include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 22 BW 3.84 MHz 21 Gain 60 50 20 40 19 30 18 20 Efficiency 17 10 16 29 33 37 41 45 Output Power (dBm) c191507fc_g1 0 49 53 PXFC191507FC Package H-37248G-4/2 Features
• Broadband internal input and o.