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PXFC191507FC |
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| Part Number | PXFC191507FC |
| Manufacturer | MACOM |
| Description | The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, hi... |
| Features |
include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXFC191507FC Package H-37248G-4/2
Gain (dB) Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
22
BW 3.84 MHz
60
21
Gain
50
20
40
19
30
18
20
Efficiency
17
10
16 29
33 37 41 45 Output Power (dBm)
c191507fc_g1
0
49 53
RF Characteristics
Features
• Broadb... |
| Document |
 PXFC191507FC Data Sheet
PDF 475.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PXFC191507FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 2 | PXFC192207FH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 3 | PXFC192207FH |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 4 | PXFC192207NF |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 5 | PXFC192207SH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|