PXFC192207FH - Infineon

PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET

The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal perform.

Features

include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 30 1930 MHz 25 1960 MHz 1990 MHz 20 Gain 15 60 50 40 30 10 20 5 0 30 10 Efficiency 35 40 45 c192207fh_g1 50 0 55 Output Power (dBm) PXFC192207FH Package H-37288G-4/2 Features
• Broadband input and output mat.