The PXFC192207NF is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and su.
include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V,
ƒ = 1875 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz 21
56
20 Gain
48
19 40
18 32
17 24
16 16
15
Efficiency
8
14 29
b192207nf_g1
0
33 37 41 45 49 53
Output Power (dBm)
PXFC192207NF Package PG-HBSOF-4-1
Features
• Broadband internal input and .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PXFC192207FH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PXFC192207FH |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PXFC192207SH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PXFC191507FC |
MACOM |
150W High Power RF LDMOS FET | |
5 | PXFC191507FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PXFC193808SV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
7 | PXFC211507SC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
8 | PXFC212551SC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
9 | PXF4333 |
Infineon Technologies AG |
ABM 3G ATM Buf fer Manager | |
10 | PXF4336 |
Infineon Technologies AG |
ABM Premium ATM Buf fer Manager | |
11 | PXFE181507FC |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
12 | PXFE211507FC |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET |